AT49F512数据手册集成电路（IC）的存储器规格书PDF

描述 Description

The AT49F512 is a 5-volt-only in-system programmable and erasable Flash Memory. Its 512K of memory is organized as 65,536 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 70 ns with a power dissipation of just 165 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 100 µA.

特性 Features

• Single Voltage Operation
   – 5V Read
   – 5V Reprogramming
• Fast Read Access Time - 70 ns
• Internal Program Control and Timer
• 8K bytes Boot Block With Lockout
• Fast Erase Cycle Time - 10 seconds
• Byte By Byte Programming - 10 µs/Byte
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
   – 30 mA Active Current
   – 100 µA CMOS Standby Current
• Typical 10,000 Write Cycles

简介

AT49F512属于集成电路（IC）的存储器。由制造生产的AT49F512存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。