AT49BV8192数据手册集成电路（IC）的存储器规格书PDF

描述 Description

The AT49BV8192 and AT49LV8192 are 3-volt, 8-megabit Flash Memories organized as 512K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than 50 µA.
The device contains a user-enabled “boot block” protection feature. Two versions of the feature are available: the AT49BV/LV8192 locates the boot block at lowest order addresses (“bottom boot”); the AT49BV/LV8192T locates it at highest order addresses (“top boot”)

特性 Features

• Low Voltage Operation
   – 2.7V Read
   – 5V Program/Erase
• Fast Read Access Time - 120 ns
• Internal Erase/Program Control
• Sector Architecture
   – One 8K Words (16K bytes) Boot Block with Programming Lockout
   – Two 8K Words (16K bytes) Parameter Blocks
   – One 488K Words (976K bytes) Main Memory Array Block
• Fast Sector Erase Time - 10 seconds
• Word-By-Word Programming - 30 µs/Word
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
   – 25 mA Active Current
   – 50 µA CMOS Standby Current
• Typical 10,000 Write Cycles 

简介

AT49BV8192属于集成电路（IC）的存储器。由制造生产的AT49BV8192存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。