4-megabit (512K x 8) Flash Memory

Description The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers an access time of 70 ns (VCC= 2.7V to 3.6V) and an access time of

文件：355.09 Kbytes 页数：21 Pages

ATMEL

爱特梅尔

Package：32-TFSOP（0.724"，18.40mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC FLASH 4MBIT PARALLEL 32TSOP

MICROCHIP

微芯科技

4-megabit (512K x 8) Flash Memory

Description The AT49BV040B is a 2.7V to 5.5V in-system reprogrammable Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers an access time of 70 ns (VCC= 2.7V to 3.6V) and an access time of

文件：355.09 Kbytes 页数：21 Pages

ATMEL

爱特梅尔

4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. Wh

文件：210.85 Kbytes 页数：12 Pages

ATMEL

爱特梅尔