AT49BV040T中文资料爱特梅尔数据手册PDF规格书

描述 Description

The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 50 µA.

The device contains a user-enabled “boot block” protection feature. The AT49BV/LV040 locates the boot block at lowest order addresses (“bottom boot”)

特性 Features

• Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)

• Fast Read Access Time – 70 ns

• Internal Program Control and Timer

• 16K Bytes Boot Block with Lockout

• Fast Chip Erase Cycle Time – 10 seconds

• Byte-by-byte Programming – 30 µs/Byte Typical

• Hardware Data Protection

• Data Polling for End of Program Detection

• Low Power Dissipation

– 25 mA Active Current

– 50 µA CMOS Standby Current

• Typical 10,000 Write Cycles

• Small Packaging

– 8 x 14 mm VSOP/TSOP