包装：盒 类别：开关 配件 - 帽盖 描述：CAP PUSHBUTTON SQ BLK/AMBER LED

NKK

恩楷楷

NPN wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. FEATURES • High power gain • High efficiency • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capaci

文件：160.23 Kbytes 页数：16 Pages

PHI

PHI

Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz

Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions. Features: • Desi

文件：22.58 Kbytes 页数：2 Pages

NTE

Metal Oxide Varistors (MOV)

Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby

文件：27.74 Kbytes 页数：3 Pages

NTE