64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection

文件：341.52 Kbytes 页数：18 Pages

ATMEL

爱特梅尔

64K (8K x 8) High-speed Parallel EEPROM with Page Write and Software Data Protection

文件：394.1 Kbytes 页数：17 Pages

ATMEL

爱特梅尔

64K High Speed Parallel EEPROM with Page Write and Sfotware Data Protection

文件：373.03 Kbytes 页数：16 Pages

ATMEL

爱特梅尔

64K High Speed Parallel EEPROM with Page Write and Sfotware Data Protection

文件：373.03 Kbytes 页数：16 Pages

ATMEL

爱特梅尔

Automatic Page Write Operation

文件：373.03 Kbytes 页数：16 Pages

ATMEL

爱特梅尔

64K High Speed Parallel EEPROM with Page Write and Sfotware Data Protection

文件：373.03 Kbytes 页数：16 Pages

ATMEL

爱特梅尔

64K High Speed Parallel EEPROM with Page Write and Sfotware Data Protection

文件：373.03 Kbytes 页数：16 Pages

ATMEL

爱特梅尔

5V High-Speed 64Kbit (8Kbit x 8) Parallel EEPROM with Software Data Protection

The Microchip AT28HC64B is a high-performance64Kbit Parallel EEPROM offering access times to 55ns with power dissipation of220mW. Deselected, CMOS standby current is less than 100μA. Accessed likestatic RAM for the read or write cycle without external components, it containsa 64-byte page register t 8 Kbits x 8 (64 Kbit)\n5 V ±10% Supply\nParallel Interface\n70ns access time\nSelf-Timed Erase and Write Cycles (10 ms max)\nPage Write and Byte Write\nData Polling for end of write detection\n2 ms Maximum Option see AT28HC64BF datasheet\nLow Power Consumption\nRead / Write current 40 mA (Max)\n;

Microchip

微芯科技

5V High Speed 64Kbit (8Kbit x 8) Parallel EEPROM with Software Data Protection

The Microchip AT28HC64BF is a high-performance64Kbit Parallel EEPROM offering access times to 55ns with power dissipation of220mW. Deselected, CMOS standby current is less than 100µA. Accessed likestatic RAM for the read or write cycle without external components, it containsa 64-byte page register 8 Kbits x 8 (64 Kbit)\n5 V ±10% Supply\nParallel Interface\n70ns access time\nSelf-Timed Erase and Write Cycles\nPage Write and Byte Write\nData Polling for end of write detection\n2 ms Maximum Option\nLow Power Consumption\nRead / Write current 40 mA (Max)\nStandby current TTL 2 mA (Max), CMOS ;

Microchip

微芯科技

Package：32-LCC（J 形引线）；包装：管件 类别：集成电路（IC） 存储器 描述：IC EEPROM 64KBIT PARALLEL 32PLCC

MICROCHIP

微芯科技