256 32K x 8 High Speed Parallel EEPROMs

Description The AT28HC256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256 offers access times to 70 ns with power dissipation of

文件：445.53 Kbytes 页数：12 Pages

ATMEL

爱特梅尔

256 32K x 8 High Speed CMOS E2PROM

文件：728.35 Kbytes 页数：12 Pages

ATMEL

爱特梅尔

5V High-Speed 256Kbit (32Kbit x 8) Parallel EEPROM

The Microchip AT28HC256is a high-performance 256Kbit Parallel EEPROM available in both Industrial andMilitary temp ranges, offering access times to 70ns with power dissipation of440mW. Deselected, CMOS standby current is less than 5mA. Accessed like staticRAM for the read or write cycle without exte 32 Kbits x 8 (256 Kbit)\n5V ± 10% Supply\nParallel Interface\nAT28HC256E - High Endurance 100K Write Cycles Option\nAT28HC256F - 3 ms Fast Write Option\n70ns access time\nSelf-Timed Erase and Write Cycles (10 ms max)\nPage Write and Byte Write\nData Polling for end of write detection\nLow Power ;

Microchip

微芯科技

256 32K x 8 High Speed Parallel EEPROMs

Description The AT28HC256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256 offers access times to 70 ns with power dissipation of

文件：445.53 Kbytes 页数：12 Pages

ATMEL

爱特梅尔

256 32K x 8 High Speed Parallel EEPROMs

Description The AT28HC256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256 offers access times to 70 ns with power dissipation of

文件：445.53 Kbytes 页数：12 Pages

ATMEL

爱特梅尔

256 32K x 8 High Speed Parallel EEPROMs

Description The AT28HC256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256 offers access times to 70 ns with power dissipation of

文件：445.53 Kbytes 页数：12 Pages

ATMEL

爱特梅尔

256 32K x 8 High Speed Parallel EEPROMs

Description The AT28HC256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256 offers access times to 70 ns with power dissipation of

文件：445.53 Kbytes 页数：12 Pages

ATMEL

爱特梅尔

256 32K x 8 High Speed Parallel EEPROMs

Description The AT28HC256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256 offers access times to 70 ns with power dissipation of

文件：445.53 Kbytes 页数：12 Pages

ATMEL

爱特梅尔

256 32K x 8 High Speed Parallel EEPROMs

Description The AT28HC256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256 offers access times to 70 ns with power dissipation of

文件：445.53 Kbytes 页数：12 Pages

ATMEL

爱特梅尔

256 32K x 8 High Speed Parallel EEPROMs

Description The AT28HC256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256 offers access times to 70 ns with power dissipation of

文件：445.53 Kbytes 页数：12 Pages

ATMEL

爱特梅尔