AT-42086-TR1中文资料Up to 6 GHz Medium Power Silicon Bipolar Transistor数据手册Agilent规格书

描述 Description

Agilent’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42086 is housed in a low cost surface mount .085\" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50 Ω up to 1 GHz, makes this device easy to use as a low noise amplifier.
The AT-42086 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion implantation, self-alignment techniques, and gold metalization in the fabrication of this device.

特性 Features

• High Output Power:
   20.5 dBm Typical P1 dB at 2.0 GHz
• High Gain at 1 dB Compression:
   13.5 dB Typical G1 dB at 2.0 GHz
• Low Noise Figure:
   1.9 dB Typical NFO at 2.0 GHz
• High Gain-Bandwidth
   Product: 8.0 GHz Typical fT
• Surface Mount Plastic Package
• Tape-and-Reel Packaging Option Available[1]