4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones

Description Hewlett Packard’s AT-36408 combines internal input pre matching with low cost, NPN power silicon bipolar junction transistors in a SOIC-8 surface mount plastic package. This device is designed for use as the output device for GSM Class IV handsets. At 4.8 volts, the device features +3

文件：104.81 Kbytes 页数：8 Pages

HP

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4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones

Agilent

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4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones

Description Hewlett Packard’s AT-36408 combines internal input pre matching with low cost, NPN power silicon bipolar junction transistors in a SOIC-8 surface mount plastic package. This device is designed for use as the output device for GSM Class IV handsets. At 4.8 volts, the device features +3

文件：104.81 Kbytes 页数：8 Pages

HP

安捷伦

4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones

Description Hewlett Packard’s AT-36408 combines internal input pre matching with low cost, NPN power silicon bipolar junction transistors in a SOIC-8 surface mount plastic package. This device is designed for use as the output device for GSM Class IV handsets. At 4.8 volts, the device features +3

文件：104.81 Kbytes 页数：8 Pages

HP

安捷伦

4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones

Description\nHewlett Packard’s AT-36408 combines internal input pre matching with low cost, NPN power silicon bipolar junction transistors in a SOIC-8 surface mount plastic package. This device is designed for use as the output device for GSM Class IV handsets. At 4.8 volts, the device features +35 • 4.8 Volt Pulsed Operation\n   (pulse width = 577 µsec, duty cycle = 12.5%)\n• +35.0 dBm Pout @ 900 MHz, Typ.\n• 65% Collector Efficiency @ 900 MHz, Typ.\n• 9 dB Power Gain @ 900 MHz, Typ.\n• Internal Input Pre-Matching Facilitates CascadingApplications\n• Output Power Device for GSM Class ;

Agilent

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