X Band Power Amplifier MMIC

文件：658.42 Kbytes 页数：14 Pages

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GaAs E-pHEMT X Band Power Amplifier MMIC

• 37 dBm Saturated Output Power\n• 38 % Power Added Efficiency\n• 15 dB Small Signal Gain\n• 42 dBm Output Third Order Intercept Point\n• Bias: VDD = +7 V, IDD = 1300 mA, VGG = -1.05 V (Typical)\n• Lead-free/Green/RoHS-compliant Package\n• Package Type: 10 lead Flange;

ASB

X Band Power Amplifier MMIC

文件：744.06 Kbytes 页数：17 Pages

ASB

GaAs E-pHEMT X Band Power Amplifier MMIC

• 36 dBm Saturated Output Power\n• 39 % Power Added Efficiency\n• 22 dB Small Signal Gain\n• 42 dBm Output Third Order Intercept Point\n• Bias: VDD = +7 V, IDD = 1300 mA, VGG = -0.95 V (Typical)\n• Lead-free/Green/RoHS-compliant Package\n• Package Type: 10 lead Flange;

ASB