丝印：ASW；Package：SMA；Transient Voltage Suppressor

文件：775.25 Kbytes 页数：7 Pages

BILIN

银河微电

丝印：ASW50R130EA；Package：TO247-3L；MOSFET Silicon N-Channel MOS

Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. Features Low drain-source on-resistance: RDS(ON) = 0.113Ω (typ.) Easy to control Gate switching Enhancement mode: Vth = 2.5 to 3.5 V

文件：2.30093 Mbytes 页数：10 Pages

SY

顺烨电子

丝印：ASW50R130EA；Package：TO247-3L；MOSFET Silicon N-Channel MOS

Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. Features Low drain-source on-resistance: RDS(ON) = 0.113Ω (typ.) Easy to control Gate switching Enhancement mode: Vth = 2.5 to 3.5 V

文件：2.30093 Mbytes 页数：10 Pages

SHUNYE

顺烨电子

丝印：ASW65R120EFD；Package：TO247；MOSFET Silicon N-Channel MOS

Applications Boost PFC switch, Half bridge or Asymmetric half bridge or Series resonance half bridge and full bridge topologies. Server power, Telecom power, EV charging, Solar inverter, UPS Application. Features Low drain-source on-resistance: RDS(ON) = 0.105Ω (typ.) Easy to control Gate

文件：2.072199 Mbytes 页数：13 Pages

SHUNYE

顺烨电子

丝印：ASW65R120EFD；Package：TO220F；MOSFET Silicon N-Channel MOS

文件：2.072199 Mbytes 页数：13 Pages

SY

顺烨电子

丝印：ASW65R120EFD；Package：TOLL-8L；MOSFET Silicon N-Channel MOS

文件：2.072199 Mbytes 页数：13 Pages

SY

顺烨电子

丝印：ASW65R120EFD；Package：TO247；MOSFET Silicon N-Channel MOS

文件：2.072199 Mbytes 页数：13 Pages

SY

顺烨电子

丝印：ASW50R130EA；Package：TO247-3L；MOSFET Silicon N-Channel MOS

Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. Features Low drain-source on-resistance: RDS(ON) = 0.113Ω (typ.) Easy to control Gate switching Enhancement mode: Vth = 2.5 to 3.5 V

文件：2.30093 Mbytes 页数：10 Pages

SY

顺烨电子

丝印：ASW50R130EA；Package：TO247-3L；MOSFET Silicon N-Channel MOS

Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. Features Low drain-source on-resistance: RDS(ON) = 0.113Ω (typ.) Easy to control Gate switching Enhancement mode: Vth = 2.5 to 3.5 V

文件：2.30093 Mbytes 页数：10 Pages

SHUNYE

顺烨电子

丝印：ASW65R120EFD；Package：TO247；MOSFET Silicon N-Channel MOS

Applications Boost PFC switch, Half bridge or Asymmetric half bridge or Series resonance half bridge and full bridge topologies. Server power, Telecom power, EV charging, Solar inverter, UPS Application. Features Low drain-source on-resistance: RDS(ON) = 0.105Ω (typ.) Easy to control Gate

文件：2.072199 Mbytes 页数：13 Pages

SHUNYE

顺烨电子