丝印：ASP65R350E；Package：TO220；MOSFET Silicon N-Channel MOS

Applications PFC stages, hard switching PWM stages and resonant switching PWM PC, Silver box, Adaptor, LCD & PDP TV, Lighting, Server power, Telecom power and UPS application. Features Low drain-source on-resistance: RDS(ON) = 0.318Ω (typ.) Easy to control Gate switching Enhancement mode: Vt

文件：2.74439 Mbytes 页数：13 Pages

SY

顺烨电子

丝印：ASP65R350E；Package：TO220；MOSFET Silicon N-Channel MOS

1. Applications PFC stages, hard switching PWM stages and resonant switching PWM PC, Silver box, Adaptor, LCD & PDP TV, Lighting, Server power, Telecom power and UPS application. 2. Features Low drain-source on-resistance: RDS(ON) = 0.318Ω (typ.) Easy to control Gate switching Enhancement mo

文件：2.74439 Mbytes 页数：13 Pages

SHUNYE

顺烨电子

SJ MOSFET

SJ MOSFT, 安海半导体推出新一代SJ MOSFET系列,采用先进的多层外延技术，优化了元胞结构，具有电流能力强，短路能力好，雪崩特性强，体内二极管反向恢复特性优，dv/dt能力优，EMI特性好，抗浪涌能力强的等特点和优点。

ANHI

安海半导体

SJ MOSFET

SJ MOSFT, 安海半导体推出新一代SJ MOSFET系列,采用先进的多层外延技术，优化了元胞结构，具有电流能力强，短路能力好，雪崩特性强，体内二极管反向恢复特性优，dv/dt能力优，EMI特性好，抗浪涌能力强的等特点和优点。

ANHI

安海半导体