ASIMRF892

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIMRF892isDesignedforClassAB,CellularBaseStationApplicationsupto900MHz. FEATURES: •InternalInputMatchingNetwork •PG=8.5dBat14W/900MHz •Omnigold™MetalizationSystem

ATAR892

Low-currentMicrocontrollerforWirelessCommunication

ATAR892-C

Low-currentMicrocontrollerforWirelessCommunication

ATAR892X-YYY-TKQYZ

Low-currentMicrocontrollerforWirelessCommunication

ATAR892X-YYY-TKSYZ

Low-currentMicrocontrollerforWirelessCommunication

B892

Large-CurrentSwitchingApplications

Large-CurrentSwitchingApplications Features •FBETandMBITprocessed(OriginalprocessofSANYO). •Lowsaturationvoltage. •LargecurrentcapacityandwideASO. Applications •Powersupplies,relaydrivers,lampdrivers,andautomotivewiring.

BA892

SiliconRFSwitchingDiode

BA892

Band-switchingdiode

DESCRIPTION Planar,highperformanceband-switchdiodeinasmallSMDplasticpackage(SOD523). FEATURES •SmallplasticSMDpackage •Lowdiodecapacitance •Lowdiodeforwardresistance •Smallinductance. APPLICATIONS •Lowlossband-switchinginVHFtelevisiontuners •Surfacemountb

BA892

SiliconRFSwitchingDiode

BA892

ForbandswitchinginTV/VTRtunersandmobileapplications

SiliconRFSwitchingDiode •ForbandswitchinginTV/VTRtunersandmobileapplications •Verylowforwardresistance(typ.0.45Ω@3mA) •Smallcapacitance •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101