SILICON DIODE

DESCRIPTION: The ASI FH1100 is a Silicon Diffused Hot Carrier Diode. FEATURES INCLUDE: • QS = 1.6 pC Typ. • C = 1.0 pF Max. @ f = 890 MHz • Hermetic Glass Package

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ASI

SILICON DIODE

ASI Semiconductor

ASMBJ-1100

REGULATORY COMPLIANCE: EU RoHS DIRECTIVE (MOST RECENT RELEASED VERSION)

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ASMBJ-1100

REGULATORY COMPLIANCE: EU RoHS DIRECTIVE (MOST RECENT RELEASED VERSION)

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CON SMB PLUG CRIMP LMR100, RG188

ELECTRICAL: IMPEDANCE: 50 OHM FREQUENCY RANGE: DC ~ 4 GHz (USEABLE TO 10 GHz) VSWR: 1.2 MAX. @ DC ~ 4 GHz DIELECTRIC WITHSTANDING VOLTAGE: 1,000 Vrms DURABILITY: 500 CYCLES MIN. MISCELLANEOUS: APPLICATIONS: LMR100, RG174/U, RG188A/U, RG316/U. ALL DIMENSIONS ARE FOR REFERENCE ONLY. C

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