N-MOS Trench

ASDsemi

安森德

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：362.4 Kbytes 页数：2 Pages

ISC

无锡固电

400V N-Channel MOSFET

文件：732.38 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

HiPerFET Power MOSFETs Q-Class

HiPerFET Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Advantage • Easy to mount • Space savings • High power density

文件：107.23 Kbytes 页数：2 Pages

IXYS

艾赛斯