Automotive & Industrial Grade 32.768kHz Continuous Voltage SMD Crystal XO

Features •Continuous VDD operation from 1.62 V ~ 3.63 V •Optimized for low current consumption •Output Enable/Start & Disable/Stop function •Output waveform CMOS/LVCMOS compatible •Hermetically seam-sealed ceramic package •AEC-Q200 Qualified •Automotive Grade 1: -40°C to +125°C •TS16949 Pr

文件：421.06 Kbytes 页数：4 Pages

ABRACON

Automotive & Industrial Grade 32.768kHz Continuous Voltage SMD Crystal XO

Features •Continuous VDD operation from 1.62 V ~ 3.63 V •Optimized for low current consumption •Output Enable/Start & Disable/Stop function •Output waveform CMOS/LVCMOS compatible •Hermetically seam-sealed ceramic package •AEC-Q200 Qualified •Automotive Grade 1: -40°C to +125°C •TS16949 Pr

文件：421.06 Kbytes 页数：4 Pages

ABRACON

ULTRA MINIATURE PURE SILICON CLOCK OSCILLATORS

FEATURES: • Ultra Miniature Pure Silicon Clock Oscillator • MEMS Technology by Discera • Low Power Consumption

文件：102.79 Kbytes 页数：1 Pages

ABRACON

Vaisala ASAP Sounding Station

Features • Upper-air observation station for marine conditions. • Radiosonde data collection and transmission in standard WMO message format, TEMP SHIP and BUFR. • Radiosonde launcher: ALS211

文件：309.27 Kbytes 页数：2 Pages

VAISALA

维萨拉

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI ASAT10 is Designed for General Purpose Class C Operations up to 1.7 GHz. FEATURES: • Internal Input Matching Network • PG = 11 dB at 10 W/1.7 GHz • Omnigold™ Metalization System

文件：17.09 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI ASAT15 is Designed for General Purpose Class Operations up to 1.7 GHz. FEATURES: • Intenal Input Matching Network • PG = 9.2 dB at 15 W/1.7 GHz • Omnigold™ Metalization System

文件：17.06 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI ASAT20 is Designed for Genral Purpose Class C Operation up to 1.7 GHz. FEATURES: • Internal Input Matching Network • PG = 8.0 dB at 20 W/1.7 GHz • Omnigold™ Metalization System / Nitride Passivation • Common Base Class C

文件：17.09 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI ASAT25 is Designed for FEATURES: • Omnigold™ Metalization System

文件：16.63 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI ASAT30 is Designed for General Purpose Class C Operation up to 1.7 GHz. FEATURES: • Internal Input/Output Matching Network • PG = 9.0 dB at 30 W/1.7 GHz • Omnigold™ Metalization System

文件：16.8 Kbytes 页数：1 Pages

ASI

NPN RF POWER TRANSISTOR

DESCRIPTION: The ASAT35L is a Common Base Transistor Designed for L-Band Satcom Amplifier Applications. FEATURES INCLUDE: • Input/Output Matching Networks • Gold Metallization • Emitter Ballasting

文件：20.57 Kbytes 页数：1 Pages

ASI