3.3V 32K x 16 CMOS SRAM

Features • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed • 10/12/15/20 ns address access time • 5, 6, 7, 8 ns output enable access time • Low power consumption: ACTIVE • 288 mW / max @ 10 ns • Low

文件：217.35 Kbytes 页数：10 Pages

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3.3V 32K x 16 CMOS SRAM

Features • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed • 10/12/15/20 ns address access time • 5, 6, 7, 8 ns output enable access time • Low power consumption: ACTIVE • 288 mW / max @ 10 ns • Low

文件：217.35 Kbytes 页数：10 Pages

ALSC

3.3V 32K x 16 CMOS SRAM

Features • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed • 10/12/15/20 ns address access time • 5, 6, 7, 8 ns output enable access time • Low power consumption: ACTIVE • 288 mW / max @ 10 ns • Low

文件：217.35 Kbytes 页数：10 Pages

ALSC

3.3V 32K x 16 CMOS SRAM

Features • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed • 10/12/15/20 ns address access time • 5, 6, 7, 8 ns output enable access time • Low power consumption: ACTIVE • 288 mW / max @ 10 ns • Low

文件：217.35 Kbytes 页数：10 Pages

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3.3 V 32K X 16 CMOS SRAM

Features • Industrial (-40o to 85oC) temperature • Organization: 32,768 words × 16 bits • Center power and ground pins for low noise • High speed - 10 ns address access time - 5 ns output enable access time • Low power consumption via chip deselect • Upper and Lower b

文件：135.94 Kbytes 页数：9 Pages

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5V/3.3V 32K×16 CMOS SRAM

The AS7C513 and the AS7C3513 are high performance CMOS 524,288-bit Static Random Access Memory (SRAM) devices organized as 32,768 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. • AS7C513 (5V version)\n• Industrial and commercial temperature\n• Center power and ground pins\n• Low power consumption: ACTIVE\n• Low power consumption: STANDBY\n• 2.0V data retention\n• TTL-compatible, three-state I/O\n• ESD protection ≥ 2000 volts\n• Latch-up current ≥ 200 mA;

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3.3V 32K×16 CMOS SRAM

• Industrial and commercial temperature\n• Center power and ground pins\n• 10/12/15/20 ns address access time\n• Low power consumption: ACTIVE\n• Low power consumption: STANDBY\n• 6T 0.18m CMOS Technology\n• TTL-compatible, three-state I/O\n• 400 mil SOJ\n• ESD protection 2000 volts\n• Latch-up cur;

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3.3 V 32K x 16 CMOS SRAM

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Package：44-BSOJ（0.400"，10.16mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 512KBIT PARALLEL 44SOJ

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Package：44-BSOJ（0.400"，10.16mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 512KBIT PARALLEL 44SOJ

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