5V/3.3V 32Kx6 CMOS SRAM

Functional description The AS7C513 is a high performance CMOS 524,288-bit Static Random Access Memory (SRAM) organized as 32,768 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tA

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5V/3.3V 32K×16 CMOS SRAM

The AS7C513 and the AS7C3513 are high performance CMOS 524,288-bit Static Random Access Memory (SRAM) devices organized as 32,768 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. • AS7C513 (5V version)\n• Industrial and commercial temperature\n• Center power and ground pins\n• Low power consumption: ACTIVE\n• Low power consumption: STANDBY\n• 2.0V data retention\n• TTL-compatible, three-state I/O\n• ESD protection ≥ 2000 volts\n• Latch-up current ≥ 200 mA;

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5V/3.3V 32Kx6 CMOS SRAM

Functional description The AS7C513 is a high performance CMOS 524,288-bit Static Random Access Memory (SRAM) organized as 32,768 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tA

文件：198.43 Kbytes 页数：10 Pages

ALSC

5V/3.3V 32Kx6 CMOS SRAM

Functional description The AS7C513 is a high performance CMOS 524,288-bit Static Random Access Memory (SRAM) organized as 32,768 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tA

文件：198.43 Kbytes 页数：10 Pages

ALSC