5V/3.3V 256K x 16 CMOS SRAM

Functional description The AS7C4098 and AS7C34098 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 262,144 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal addr

文件：235.1 Kbytes 页数：10 Pages

ALSC

5V/3.3V 256K x 16 CMOS SRAM

AllianceMemory

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5V/3.3V 256K x 16 CMOS SRAM

Functional description The AS7C4098 and AS7C34098 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 262,144 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal addr

文件：235.1 Kbytes 页数：10 Pages

ALSC

5V/3.3V 256K x 16 CMOS SRAM

Functional description The AS7C4098 and AS7C34098 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 262,144 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal addr

文件：235.1 Kbytes 页数：10 Pages

ALSC

5V/3.3V 256K x 16 CMOS SRAM

Functional description The AS7C4098 and AS7C34098 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 262,144 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal addr

文件：235.1 Kbytes 页数：10 Pages

ALSC

5V/3.3V 256K x 16 CMOS SRAM

Functional description The AS7C4098 and AS7C34098 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 262,144 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal addr

文件：235.1 Kbytes 页数：10 Pages

ALSC

3.3V 256K x 16 CMOS SRAM, access time 10ns

AllianceMemory

联盟记忆