AS6UA5128-BC中文资料Semicoa数据手册PDF规格书

Functional description

The AS6UA5128 is a low-power CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 524,288 words × 8 bits. It is designed for memory applications where slow data access, low power, and simple interfacing are desired.

特性 Features

• AS6UA5128

• Intelliwatt™ active power circuitry

• Industrial and commercial temperature ranges available

• Organization: 524,288 words × 8 bits

• 2.7V to 3.6V at 55 ns

• 2.3V to 2.7V at 70 ns

• Low power consumption: ACTIVE

- 144 mW at 3.6V and 55 ns

- 68 mW at 2.7V and 70 ns

• Low power consumption: STANDBY

- 72 µW max at 3.6V

- 41 µW max at 2.7V

- 28 µW max at 2.3V

• 1.2V data retention

• Equal access and cycle times

• Easy memory expansion with CS, OE inputs

• Smallest footprint packages

- 36(48)-ball FBGA

- 32-pin TSOP I and TSOP II packages are available on Alliance AS6UB5128 product family (available January 2001)

• ESD protection ≥ 2000 volts

• Latch-up current ≥ 200 mA