AS6UA51216-BI中文资料ALSC数据手册PDF规格书

Functional description

The AS6UA51216 is a low-power CMOS 8,388,608-bit Static Random Access Memory (SRAM) device organized as 524,288 words × 16 bits. It is designed for memory applications where slow data access, low power, and simple interfacing are desired.

特性 Features

• AS6UA51216

• Intelliwatt™ active power circuitry

• Industrial and commercial temperature ranges available

• Organization: 524,288 words × 16 bits

• 2.7V to 3.6V at 55 ns

• 2.3V to 2.7V at 70 ns

• 1.65V to 2.3V at 100 ns

• Low power consumption: ACTIVE

- 144 mW at 3.6V and 55 ns

- 68 mW at 2.7V and 70 ns

- 28 mW at 2.3 V and 100 ns

• Low power consumption: STANDBY

- 72 µW max at 3.6V

- 41 µW max at 2.7V

- 28 µW max at 2.3V

• 1.2V data retention

• Equal access and cycle times

• Easy memory expansion with CS, OE inputs

• Smallest footprint packages

- 48-ball FBGA

- 400-mil 44-pin TSOP II

• ESD protection ≥ 2000 volts

• Latch-up current ≥ 200 mA