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AS4C4M4F0

5V 4M횞4 CMOS DRAM (Fast Page mode)

Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely

文件:274.56 Kbytes 页数:18 Pages

ALSC

AS4C4M4F0-50

5V 4M횞4 CMOS DRAM (Fast Page mode)

Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely

文件:274.56 Kbytes 页数:18 Pages

ALSC

AS4C4M4F0-50JC

5V 4M횞4 CMOS DRAM (Fast Page mode)

Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely

文件:274.56 Kbytes 页数:18 Pages

ALSC

AS4C4M4F0-50JI

5V 4M횞4 CMOS DRAM (Fast Page mode)

Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely

文件:274.56 Kbytes 页数:18 Pages

ALSC

AS4C4M4F0-50TC

5V 4M횞4 CMOS DRAM (Fast Page mode)

Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely

文件:274.56 Kbytes 页数:18 Pages

ALSC

AS4C4M4F0-50TI

5V 4M횞4 CMOS DRAM (Fast Page mode)

Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely

文件:274.56 Kbytes 页数:18 Pages

ALSC

AS4C4M4F0-60

5V 4M횞4 CMOS DRAM (Fast Page mode)

Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely

文件:274.56 Kbytes 页数:18 Pages

ALSC

AS4C4M4F0-60JC

5V 4M횞4 CMOS DRAM (Fast Page mode)

Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely

文件:274.56 Kbytes 页数:18 Pages

ALSC

AS4C4M4F0-60JI

5V 4M횞4 CMOS DRAM (Fast Page mode)

Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely

文件:274.56 Kbytes 页数:18 Pages

ALSC

AS4C4M4F0-60TC

5V 4M횞4 CMOS DRAM (Fast Page mode)

Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely

文件:274.56 Kbytes 页数:18 Pages

ALSC

技术参数

  • 功能描述:

    16384Kbits 4M x 4 Replacement with DSCC 5962-n/a

供应商型号品牌批号封装库存备注价格
24+
SOJ
37
询价
ALLIANCE
24+
SOJ
5650
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
ALIANCE
22+
原厂原封
8200
原装现货库存.价格优势!!
询价
ALLIANCE
25+
SOJ
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
AllianceMemory
23+
NA
396
专做原装正品,假一罚百!
询价
ALLIANCE
25+23+
SOJ
38996
绝对原装正品全新进口深圳现货
询价
ALLIANCE
1824+
SOJ-26
3100
原装现货专业代理,可以代拷程序
询价
ALLIANCE
新年份
SOJ
3500
绝对全新原装现货,欢迎来电查询
询价
AllianceMemoryInc
2022+
160
全新原装 货期两周
询价
ALLIANCE
24+
SOJ
65200
一级代理/放心采购
询价
更多AS4C4M4供应商 更新时间2025-10-10 16:30:00