AS4C4M4F0中文资料ALSC数据手册PDF规格书

Functional description

The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels. The Alliance 16Mb DRAM family is optimized for use as main memory in PC, workstation, router and switch applications.

特性 Features

• Organization: 4,194,304 words × 4 bits

• High speed

- 50/60 ns RAS access time

- 25/30 ns column address access time

- 12/15 ns CAS access time

• Low power consumption

- Active: 908 mW max

- Standby: 5.5 mW max, CMOS I/O

• Fast page mode

• Refresh

- 4096 refresh cycles, 64 ms refresh interval for AS4C4M4F0

- 2048 refresh cycles, 32 ms refresh interval for AS4C4M4F1

- RAS-only or CAS-before-RAS refresh or self-refresh

• TTL-compatible, three-state I/O

• JEDEC standard package

- 300 mil, 24/26-pin SOJ

- 300 mil, 24/26-pin TSOP

• Latch-up current ≥ 200 mA

• ESD protection ≥ 2000 mV

• Industrial and commercial temperature available