High Current Density Standard Avalanche Surface-Mount Rectifiers

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Glass passivated pellet chip junction • Controlled avalanche characteristics • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q

文件：109.53 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High Current Density Standard Avalanche Surface Mount Rectifiers

文件：92.3 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High Current Density Standard Avalanche

文件：93.87 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High Current Density Standard Avalanche Surface-Mount Rectifiers

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Glass passivated pellet chip junction • Controlled avalanche characteristics • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q

文件：109.53 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High Current Density Standard Avalanche

文件：93.87 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High Current Density Standard Avalanche Surface-Mount Rectifiers

Very low profile - typical height of 1.1 mm\nIdeal for automated placement\nGlass passivated pellet chip junction;

Vishay

威世科技

Package：TO-277，3-PowerDFN；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE AVALANCHE 200V 2.1A TO277A

Vishay General Semiconductor - Diodes Division

Package：TO-277，3-PowerDFN；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE AVALANCHE 200V 2.1A TO277A

Vishay General Semiconductor - Diodes Division

Package：TO-277，3-PowerDFN；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE AVALANCHE 200V 2.1A TO277A

Vishay General Semiconductor - Diodes Division