MOS(场效应管)

FormosaMS

美丽微半导体

ADVANCED PLANAR TECHNOLOGY, LOW ON-RESISTANCE

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

文件：242.54 Kbytes 页数：11 Pages

IRF

Plastic-Encapsulate MOSFETS

FEATURE Excellent RDS(ON), low gate charge,low gate voltages APPLICATION Load switch and in PWM applicatopns

文件：815.66 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

Plastic-Encapsulate MOSFETS

FEATURE Excellent RDS(ON), low gate charge,low gate voltages APPLICATION Load switch and in PWM applicatopns ESD Protected up to 2kV

文件：233.93 Kbytes 页数：4 Pages

GWSEMI

唯圣电子