MOS(场效应管)

FormosaMS

美丽微半导体

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：94.53 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：156.56 Kbytes 页数：10 Pages

IRF

MSP 34x5G Multistandard Sound Processor Family

[Micronas] Introduction The MSP 34x5G family of single-chip Multistandard Sound Processors covers the sound processing of all analog TV standards worldwide, as well as the NICAM digital sound standards. The full TV sound processing, starting with analog sound IF signal-in, down to processed anal

文件：1.54156 Mbytes 页数：98 Pages

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