5V 512K x 8 CMOS FLASH EEPROM

Functional description The AS29F040 is a 4-megabit, 5-volt-only Flash memory device organized as 512K bytes of 8 bits each. For flexible erase an program capability, the 4 megabits of data is divided into eight 64K-byte sectors. The ×8 data appears on DQ0–DQ7. The AS29F040 is offered in JEDEC sta

文件：341.03 Kbytes 页数：18 Pages

ALSC

5V 512K x 8 CMOS FLASH EEPROM

Functional description The AS29F040 is a 4-megabit, 5-volt-only Flash memory device organized as 512K bytes of 8 bits each. For flexible erase an program capability, the 4 megabits of data is divided into eight 64K-byte sectors. The ×8 data appears on DQ0–DQ7. The AS29F040 is offered in JEDEC sta

文件：341.03 Kbytes 页数：18 Pages

ALSC

5V 512K x 8 CMOS FLASH EEPROM

Functional description The AS29F040 is a 4-megabit, 5-volt-only Flash memory device organized as 512K bytes of 8 bits each. For flexible erase an program capability, the 4 megabits of data is divided into eight 64K-byte sectors. The ×8 data appears on DQ0–DQ7. The AS29F040 is offered in JEDEC sta

文件：341.03 Kbytes 页数：18 Pages

ALSC

4 Megabit (512K x 8-bit) Flash Memory

[EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040

文件：223.38 Kbytes 页数：32 Pages

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