3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM

Features • Organization: 2M×8 / 1M×16 • Sector architecture - One 16K; two 8K; one 32K; and thirty-one 64K byte sectors - One 8K; two 4K; one 16K; and thirty-one 32K word sectors - Boot code sector architecture—T (top) or B (bottom) - Erase any combination of sectors or full chip

文件：561.88 Kbytes 页数：29 Pages

ALSC

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a

文件：420.29 Kbytes 页数：45 Pages

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

文件：930.45 Kbytes 页数：43 Pages

EON

宜扬科技

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory

文件：420.04 Kbytes 页数：43 Pages

EON

宜扬科技