5A Low Dropout Voltage Regulator Adjustable & Fixed Output, Fast Response

PRODUCT DESCRIPTION The AS2850 are low power 5A adjustable and fixed voltage regulators that are very easy to use. It requires only 2 external resistors to set the output voltage for adjustable version. The AS2850 are designed for low voltage applications that offers lower dropout voltage and f

文件：159.15 Kbytes 页数：6 Pages

Sipex

128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS28C010 is capable of in system electrical Byte and Page reprogrammability. FEATURES • Access speed: 120, 150, 200, a

文件：306.46 Kbytes 页数：14 Pages

AUSTIN

Hardware Data Protection

GENERAL DESCRIPTION The AS28C010 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS28C010 is capable of in system electrical Byte and Page reprogrammability. FEATURES • Access speed: 120, 150, 200, and 250ns • Data Retention:

文件：307.83 Kbytes 页数：15 Pages

MICROSS

128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS28C010 is capable of in system electrical Byte and Page reprogrammability. FEATURES • Access speed: 120, 150, 200, a

文件：306.46 Kbytes 页数：14 Pages

AUSTIN

128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS28C010 is capable of in system electrical Byte and Page reprogrammability. FEATURES • Access speed: 120, 150, 200, a

文件：306.46 Kbytes 页数：14 Pages

AUSTIN

128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS28C010 is capable of in system electrical Byte and Page reprogrammability. FEATURES • Access speed: 120, 150, 200, a

文件：306.46 Kbytes 页数：14 Pages

AUSTIN

128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS28C010 is capable of in system electrical Byte and Page reprogrammability. FEATURES • Access speed: 120, 150, 200, a

文件：306.46 Kbytes 页数：14 Pages

AUSTIN

128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS28C010 is capable of in system electrical Byte and Page reprogrammability. FEATURES • Access speed: 120, 150, 200, a

文件：306.46 Kbytes 页数：14 Pages

AUSTIN

128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS28C010 is capable of in system electrical Byte and Page reprogrammability. FEATURES • Access speed: 120, 150, 200, a

文件：306.46 Kbytes 页数：14 Pages

AUSTIN

128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS28C010 is capable of in system electrical Byte and Page reprogrammability. FEATURES • Access speed: 120, 150, 200, a

文件：306.46 Kbytes 页数：14 Pages

AUSTIN