微功耗磁传感器

Using low power CMOS process, the AS1810 is designedfor low power, high performance unipolar detection hall-effect application,such as cover switch, contactless switch, solid state switch and lid closesensor etc battery operation. The hall IC integrated an on-chip hall voltagegenerator for magnetic • InputVoltage Range : 1.65V to 3.65V\n• Micro-powerconsumption ideal for battery power applications\n• UniplarOperation, easy to use as output\n• Veryhigh sensitivity hall sensor\n• LowPower CMOS process technology\n• Chopperstabilization amplifier stage\n• MagneticSensitivity (typical)\nBOP=30Gaus;

ANGSemi

昂赛微

霍尔传感器

Using low power CMOS process, the AS1510A is designed for low power, high performance unipolar detection hall-effect application, such as cover switch, contactless switch, solid state switch and lid close sensor etc battery operation. The hall IC integrated an on-chip hall voltage generator for magn

ANGSemi

昂赛微

High Current, Solid State Relay (Photo MOSFET) (60V/1.0A/0.5廓)

文件：1.03347 Mbytes 页数：17 Pages

BOARDCOM

博通

Compact Solid-State Bi-directional Signal Switch

文件：197.02 Kbytes 页数：15 Pages

AVAGO

安华高

Semiconductor Device Analyzer

文件：2.33345 Mbytes 页数：36 Pages

KEYSIGHT

是德科技