ART2K0FEG中文资料Power LDMOS transistor数据手册Ampleon规格书

描述 Description

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

特性 Features

• High breakdown voltage enables class E operation up to VDS = 53 V
• Qualified up to a maximum of VDS = 65 V
• Characterized from 30 V to 65 V to support a wide range of applications
• Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
• Excellent ruggedness with no device degradation
• High efficiency
• Excellent thermal stability
• Designed for broadband operation
• For RoHS compliance see the product details on the Ampleon website

应用 Application

• Industrial, scientific and medical applications
• Plasma generators
• MRI systems
• CO2 lasers
• Particle accelerators