Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz. Features and benefits  High breakdo

文件：1.79928 Mbytes 页数：17 Pages

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Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz. Features and benefits  High breakdo

文件：1.79928 Mbytes 页数：17 Pages

AMPLEON

安谱隆

Power LDMOS transistor

Features and benefits  High breakdown voltage enables class E operation up to VDS = 53 V  Qualified up to a maximum of VDS = 65 V  Characterized from 30 V to 65 V to support a wide range of applications  Integrated dual sided ESD protection enables class C operation and complete switch of

文件：1.57916 Mbytes 页数：19 Pages

AMPLEON

安谱隆

Power LDMOS transistor

Features and benefits  High breakdown voltage enables class E operation up to VDS = 53 V  Qualified up to a maximum of VDS = 65 V  Characterized from 30 V to 65 V to support a wide range of applications  Integrated dual sided ESD protection enables class C operation and complete switch of

文件：1.57916 Mbytes 页数：19 Pages

AMPLEON

安谱隆

Power LDMOS transistor

Features and benefits  High breakdown voltage enables class E operation up to VDS = 53 V  Qualified up to a maximum of VDS = 65 V  Characterized from 30 V to 65 V to support a wide range of applications  Integrated dual sided ESD protection enables class C operation and complete switch of

文件：1.57916 Mbytes 页数：19 Pages

AMPLEON

安谱隆

Power LDMOS transistor

Features and benefits  High breakdown voltage enables class E operation up to VDS = 53 V  Qualified up to a maximum of VDS = 65 V  Characterized from 30 V to 65 V to support a wide range of applications  Integrated dual sided ESD protection enables class C operation and complete switch of

文件：1.57916 Mbytes 页数：19 Pages

AMPLEON

安谱隆

Power LDMOS transistor

Features and benefits  High breakdown voltage enables class E operation up to VDS = 53 V  Qualified up to a maximum of VDS = 65 V  Characterized from 30 V to 65 V to support a wide range of applications  Integrated dual sided ESD protection enables class C operation and complete switch of

文件：1.57916 Mbytes 页数：19 Pages

AMPLEON

安谱隆

Power LDMOS transistor

Features and benefits  High breakdown voltage enables class E operation up to VDS = 53 V  Qualified up to a maximum of VDS = 65 V  Characterized from 30 V to 65 V to support a wide range of applications  Integrated dual sided ESD protection enables class C operation and complete switch of

文件：1.57916 Mbytes 页数：19 Pages

AMPLEON

安谱隆

Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor hasbeen designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz. • High breakdown voltage enables class E operation up to VDS = 50 V\n• Qualified up to a maximum of VDS = 65 V\n• Characterized from 30 V to 65 V to support a wide range of applications\n• Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor\n• Exc;

Ampleon

安谱隆

Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz • High breakdown voltage enables class E operation up to VDS = 53 V\n• Qualified up to a maximum of VDS = 65 V\n• Characterized from 30 V to 65 V to support a wide range of applications\n• Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor\n• Exc;

Ampleon

安谱隆