首页 >APX9150CEI-TRG>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
23A,-100V,0.140Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron | Intersil Intersil Corporation | Intersil | ||
23A,-100V,0.140Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron | Intersil Intersil Corporation | Intersil | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
26A,-100V,0.125Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25MΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi | Intersil Intersil Corporation | Intersil | ||
26A,-100V,0.125Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25MΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi | Intersil Intersil Corporation | Intersil | ||
26A,-100V,0.125Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25MΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi | Intersil Intersil Corporation | Intersil | ||
22A,-100V,0.140Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
22A,-100V,0.140Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | Intersil Intersil Corporation | Intersil | ||
RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | Intersil Intersil Corporation | Intersil |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ANPEC/茂达电子 |
21+ |
TSSOF-6 |
131990 |
原包装进口现货!假一赔十! |
询价 | ||
ANPEC(台湾茂达) |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
询价 | ||
ANPEC |
1650+ |
DFN |
1967 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ANPEC |
23+ |
SOT23-6 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ANPEC/茂达电子 |
23+ |
SOT23-6 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
ANPEC |
18+ |
SOT23-6 |
1336 |
进口原装现货假一赔万力挺实单 |
询价 | ||
ANPEC |
23+ |
SOT23-6 |
3836 |
原厂原装正品 |
询价 | ||
ANPEC/茂达电子 |
23+ |
QFN |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ANPEC/茂达 |
24+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ANPEC |
25+ |
QFN |
50 |
原装正品,欢迎来电咨询! |
询价 |
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