DA9132

High-Performance,Dual-ChannelDC-DCConverterforMobileandPortableApplications

DA9132-A

High-Performance,Dual-ChannelDC-DCConverterforAutomotiveApplications

DA9132-A

High-Performance,Dual-ChannelDC-DCConverterforAutomotiveApplications

KeyFeatures ■2.8Vto5.5Vinputvoltage ■0.3Vto1.9Voutputvoltage ■Upto3Aoutputcurrentperchannel ■4MHznominalswitchingfrequency ■Dual-channel ■220nHinductorperchannel ■20μFoutputcapacitor ■±1outputvoltageaccuracy(static) ■±5loadtransient(dynamic

E9132

Eaton’sMouldedAccessoryRange(EMA)

EP9132

SMD28PinPassiveDelayLines

SMD28PinPassiveDelayLines

FP9132

RFAMPLIFIERMODEL

IRF9132

P-CHANNELPOWERMOSFETS

FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability

IRF9132

iscN-ChannelMOSFETTransistor

IRF9132

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-10A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IRFF9132

Avalanche-Energy-RatedP-ChannelPowerMOSFETs

-5.5Aand-6.5A,-60Vand-100VrDS(on)=0.30Ωand0.40Ω TheIRFF9130,IRFF9131,IRFF9132andIRFF9133areadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Thesearep-channelenhancement-modesilicon-gat