APTGT100TL170G中文资料1700V/Three level inverter/IGBT modules数据手册Microchip规格书

描述 Description

IGBT 3 Low voltage dropLow tail currentSwitching frequency up to 20 kHzLow leakage currentKelvin emitter for easy driveLow stray inductanceStable temperature behaviorInternal thermistor for temperature monitoring (optional)Very ruggedDirect mounting to heatsink (isolated package)Low junction to case thermal resistanceInternal thermistor for temperature monitoring (optional)Easy paralleling due to positive TC of VCEsatLow profileRoHS Compliant

特性 Features

• Configuration: Three level inverter
• VCES (V): 1700
• VCESat (V): 2
• Current (A) Tc=80C: 100
• Silicon type: TRENCH 3 IGBT
• Package: SP6C

简介

APTGT100TL170G属于分立半导体产品的晶体管-IGBT-模块。由制造生产的APTGT100TL170G晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。