1200V/Single diode/Si Diode modules

FRED Si diode Ultra fast recovery timesSoft recovery characteristicsHigh blocking voltageHigh currentLow leakage current Low stray inductanceOutstanding performance at high frequency operationLow lossesDirect mounting to heatsink (isolated package)Low junction to case thermal resistanceRoHS Complian • Configuration: Single diode\n• VRRM (V): 1200\n• VF (V): 2.5\n• Current (A) Tc=80C: 400\n• Silicon type: FRED diode \n• Package: LP4C;

Microchip

微芯科技

Single diode Power Module

Features • Ultra fast recovery times • Soft recovery characteristics • Very low stray inductance • High blocking voltage • High current • Low leakage current Benefits • Low losses • Low noise switching • Direct mounting to heatsink (isolated package) • Low junction to case thermal resis

文件：186.77 Kbytes 页数：3 Pages

Microsemi

美高森美

Package：LP4；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 1.2KV 450A LP4

Microchip

微芯科技

Standard Recovery Diodes

文件：116.86 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

Standard Recovery Diodes (Stud and Flat Base Type)

文件：108.58 Kbytes 页数：2 Pages

NAINA

STANDARD RECOVERY DIODES

文件：98.87 Kbytes 页数：6 Pages

IRF