APTCV60TLM99T3G中文资料600V/Three level inverter/Si Mosfet modules数据手册Microchip规格书

描述 Description

Super junction MOSFETUltra low RDSonLow Miller capacitanceUltra low gate chargeAvalanche energy ratedIGBT3 Low voltage dropLow tail currentSwitching frequency up to 20 kHzLow leakage currentKelvin source for easy driveLow stray inductanceInternal thermistor for temperature monitoring (optional)Outstanding performance at high frequency operationDirect mounting to heatsink (isolated package)Low junction to case thermal resistanceRoHS Compliant

特性 Features

Configuration: Three level inverter
VDSS (V): 600
RDSon (mR) typ: 99
Current (A) Tc=80C: 30
Silicon type: Super Junction Mosfet/TRENCH
Package: SP3F

简介

APTCV60TLM99T3G属于分立半导体产品的晶体管-IGBT-模块。由制造生产的APTCV60TLM99T3G晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。