AWB512

5~1200MHzWide-bandCATVLinearAmplifierMMIC

BB512

SiliconVariableCapacitanceDiode(ForAMtuningapplicationsSpecifiedtuningrange1??8V)

SiliconVariableCapacitanceDiode ●ForAMtuningapplications ●Specifiedtuningrange1…8V

BCR512

NPNSiliconDigitalTransistor(Switchingcircuit,inverter,interfacecircuit,drivecircuit)

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivecircuit •Builtinbiasresistor(R1=4.7kΩ,R2=4.7kΩ)

BCR512

NPNSiliconDigitalTransistor

NPNSiliconDigitalTransistor •Builtinbiasresistor(R1=4.7kΩ,R2=4.7kΩ) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

BCR512

NPNSiliconDigitalTransistor

BCR512

NPNSiliconDigitalTransistor

BD512

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=-1.5A@TC=25℃ ·DrainSourceVoltage :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

BD512

EnhancementModeP-ChannelPowerVMOSTransistor

Features: Highinputimpedance Highspeedswitching Nominoritycarrierstoragetime CMOSlogiccompatibleinput Nothermalrunaway Nosecondarybreakdown Parallelingissimple Heatsinkconnectedtodrain

BD-A512RD

DUALDIGITLEDDISPLAYS

BD-A512RD

greenchips,whicharemadefromGaPonGaPsubstrate