isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 750V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

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ISC

无锡固电

LH1263 E&M Signaling Circuit

文件：649.28 Kbytes 页数：15 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS

APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Devices FEATURES: • Power Dissipation: 125mW • Low Package Profile: 0.4mm • Low rDS(ON) • Low Threshold Voltage • Logic Level Compatibility • Small SOT-923 Surface Mount Package DESCRIPT

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Central

SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS

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Central