isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 9.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

文件：316.91 Kbytes 页数：2 Pages

ISC

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：297.47 Kbytes 页数：2 Pages

ISC

无锡固电

SAW RF filter for Base Stations GSM 1800

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文件：463.23 Kbytes 页数：22 Pages

NSCNational Semiconductor (TI)

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