isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 59A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件：92.29 Kbytes 页数：4 Pages

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT

晶科电子

20A Schottky Barrier Rectifier

文件：196.08 Kbytes 页数：3 Pages

SEMIWELL

矽门微

20A Schottky Barrier Rectifier

文件：187.75 Kbytes 页数：3 Pages

SEMIWELL

矽门微