HIGH VOLTAGE NPN TRANSISTOR

General Description The APT17 is high voltage, small signal NPN transistor. The APT17 is available in SOT-23 and TO-92 packages. Features • High Collector-Emitter Voltage: 480V Applications • High Voltage and Low Standby Power Circuit for BCD Solution

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BCDSEMI

新进半导体

HIGH VOLTAGE NPN TRANSISTOR

文件：706.7 Kbytes 页数：10 Pages

BCDSEMI

新进半导体

N-Channel FREDFET 1000V, 17A, 0.80廓 Max, trr ??45ns

N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This FREDFET version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery d

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Microsemi

美高森美

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.78Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

无锡固电

N-Channel FREDFET 1000V, 17A, 0.80廓 Max, trr ??45ns

N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This FREDFET version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery d

文件：134.9 Kbytes 页数：4 Pages

Microsemi

美高森美

N-Channel FREDFET

N-Channel FREDFET POWER MOS 8®is a high speed, high voltage N-channel switch-mode power MOSFET. This FREDFET version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv

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Microsemi

美高森美

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 18A@ TC=25℃ • Drain Source Voltage- : VDSS=800V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.58Ω (Max) • 100 avalanche tested • Minimum Lot-to-L

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ISC

无锡固电

ISOTOP짰 Boost chopper MOSFET SiC chopper diode Power module

Features • Power MOS 8™ MOSFET - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coeffi

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Microsemi

美高森美

ISOTOP짰 Buck chopper MOSFET SiC chopper diode Power module

Features • Power MOS 8™ MOSFET - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coeffi

文件：115.84 Kbytes 页数：5 Pages

Microsemi

美高森美

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.29Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：338.15 Kbytes 页数：2 Pages

ISC

无锡固电