1.6 x 0.8 mm Infrared Emitting Diode

DESCRIPTION ● F3 Made with Gallium Arsenide Infrared Emitting diodes FEATURES ● 3.2 mm x 1.6 mm SMD LED, 1.8 mm thickness ● Mechanically and spectrally matched to phototransistor ● Package: 2000 pcs / reel ● Moisture sensitivity level: 3 ● Halogen-free ● RoHS compliant APPLICATIONS ● Inf

文件：634.59 Kbytes 页数：4 Pages

Kingbright

今台电子

1.6 x 0.8 mm Infrared Emitting Diode

DESCRIPTION ● SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. FEATURES ● 1.6 mm x 0.8 mm SMD LED, 0.75 mm thickness ● Mechanically and spectrally matched to phototransistor ● Package: 2000 pcs / reel ● Moisture sensitivity level: 3 ● RoHS compliant APPLICATIONS ●

文件：992.03 Kbytes 页数：4 Pages

TO-GRACE

至恩科技

SOT227

APT

晶科电子

上传：深圳市斌腾达科技有限公司

Module

Microchip Technology

上传：深圳市华睿芯科技有限公司

SOT-227B

Microsemi

美高森美

上传：深圳市斌腾达科技有限公司