APT15GN120SDQ1资料使用说明书供应代理-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
APT15GN120SDQ1	文件：170.21 Kbytes Page：9 Pages	High Speed PT IGBT Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature 文件：170.21 Kbytes 页数：9 Pages	MICROSEMI 美高森美	MICROSEMI
APT15GN120SDQ1G	文件：170.21 Kbytes Page：9 Pages	High Speed PT IGBT Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature 文件：170.21 Kbytes 页数：9 Pages	MICROSEMI 美高森美	MICROSEMI
APT15GN120SDQ1G	文件：300 bytes Page：1 Pages	IGBT w/ anti-parallel diode	Microchip 微芯科技	Microchip
APT15GN120SDQ1G	文件：100 bytes Page：1 Pages	包装：袋描述：IGBT 1200V 45A 195W TO247	MICROCHIP 微芯科技	MICROCHIP
APT15GN120SDQ1G	文件：100 bytes Page：1 Pages	包装：袋描述：IGBT 1200V 45A 195W TO247	MICROCHIP 微芯科技	MICROCHIP
APT15GN120SDQ1G	文件：100 bytes Page：1 Pages	包装：袋描述：IGBT 1200V 45A 195W TO247	MICROCHIP 微芯科技	MICROCHIP

更多APT15GN120SDQ1供应商更新时间2026-2-4 11:26:00