BAV199

SURFACEMOUNT,LOWLEAKAGESWITCHINGDIODES

VOLTAGE100VoltPOWER250mWatt FEATURES •Sufacemountpackageideallysuitedforautomaticinsertion. •Verylowleakagecurrent.2pAtypicalatVR=75V. •Lowcapacitance.2pFmaxatVR=0V,f=1MHz •LeadfreeincompliancewithEURoHS2011/65/EUdirective MECHANICALDATA •Case:SOT-23p

BAV199

DUALSURFACEMOUNTLOWLEAKAGEDIODE

Features •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •VeryLowLeakageCurrent •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes3and4)

BAV199

Low-leakagedoublediode

DESCRIPTION Epitaxial,medium-speedswitching,doublediodeinasmallSOT23plasticSMDpackage.Thediodesareconnectedinseries. FEATURES •PlasticSMDpackage •Lowleakagecurrent:typ.3pA •Switchingtime:typ.0.8µs •Continuousreversevoltage:max.75V •Repet

BAV199

Low-leakagedoublediode

Features •PlasticSMDpackage •Lowleakagecurrent:typ.3pA •Switchingtime:typ.0.8s •Continuousreversevoltage:max.75V •Repetitivepeakreversevoltage:max.85V •Repetitivepeakforwardcurrent:max.500mA.

BAV199

SURFACEMOUNT,LOWLEAKAGESWITCHINGDIODES

BAV199

DualSeriesSwitchingDiode

Features •LowCurrentLeakage •ForwardCurrent:IF=215mA. •SmallOutlineSurfaceMountPackage •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Marking:JY •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Hal

BAV199

SiliconLowLeakageDiode

BAV199

Plastic-EncapsulateDiode

Features ForwardCurrent IF:215mA ReverseVoltage VR:70V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55to+150oC

BAV199

LOWLEAKAGEDOUBLEDIODE

LOWLEAKAGEDOUBLEDIODE Forlowleakagecurrentapplications Feature •Verylowleakagecurrent •Mediumspeedswitchingtimes •Seriespairconfiguration

BAV199

DUALSURFACEMOUNTLOWLEAKAGEDIODE

DESCRIPTION TheUTCBAV199isadualsurfacemountdiodeprovidingthedesignerswithextremelylowleakagecurrent.TheUTCBAV199issuitableforautomaticinsertion FEATURES *ExtremelyLowLeakageCurrent