Dual Enhancement Mode MOSFET (N- and P-Channel)

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SINOPWER

大中集成电路

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/8A , RDS(ON)=22mΩ(typ.) @ VGS=4.5V RDS(ON)=30mΩ(typ.) @ VGS=2.5V • P-Channel -20V/-4.3A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V RDS(ON)=105mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON)

文件：675.47 Kbytes 页数：13 Pages

ANPEC

茂达电子

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/8A , RDS(ON)=22mΩ(typ.) @ VGS=4.5V RDS(ON)=30mΩ(typ.) @ VGS=2.5V • P-Channel -20V/-4.3A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V RDS(ON)=105mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON)

文件：675.47 Kbytes 页数：13 Pages

ANPEC

茂达电子

4700

文件：48.7 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HIGH VOLTAGE PLANAR RESISTORS

High Voltage Planar Resistors 4500 Series •Voltages up to 20kV dc. •Powers up to 4.5 Watts •TCR to 50ppm/°C •Customs design service available •Planar construction gives low inductance and capacitance Application Notes The terminations should not be bent closer than 1.5m

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WELWYN

Shielded Surface Mount Power Inductors

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MuRata

村田