N-Channel Enhancement Mode MOSFET

Features • 20V/5A,RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=110mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Switching Regulators • Switching Converte

文件：116.18 Kbytes 页数：10 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 20V/5A,RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=110mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Switching Regulators • Switching Converte

文件：116.18 Kbytes 页数：10 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 20V/5A,RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=110mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Switching Regulators • Switching Converte

文件：116.18 Kbytes 页数：10 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 20V/5A,RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=110mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Switching Regulators • Switching Converte

文件：116.18 Kbytes 页数：10 Pages

ANPEC

茂达电子

N-Channel 30-V (D-S) MOSFET

文件：1.011 Mbytes 页数：8 Pages

VBSEMI

微碧半导体