1.6X0.8mm SMD CHIP LED LAMP

Features ● 1.6mmx0.8mm SMT LED, 0.65mm THICKNESS. ● LOW POWER CONSUMPTION. ● WIDE VIEWING ANGLE. ● IDEAL FOR BACKLIGHT AND INDICATOR. ● VARIOUS COLORS AND LENS TYPES AVAILABLE. ● PACKAGE : 2000PCS / REEL.

文件：193.3 Kbytes 页数：5 Pages

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今台电子

1.6X0.8mm SMD CHIP LED LAMP

Description The Hyper Red source color devices are made with In GaAlP on GaAs substrate Light Emitting Diode. Features • 1.6mmX0.8mm SMT LED, 0.65mm THICKNESS. • LOW POWER CONSUMPTION. • WIDE VIEWING ANGLE. • IDEAL FOR BACKLIGHT AND INDICATOR. • VARIOUS COLORS AND LENS TYPES

文件：193.58 Kbytes 页数：5 Pages

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今台电子

1.6X0.8mm SMD CHIP LED LAMP

SUPER THIN SMD CHIP LED 1608(0603)

文件：192.46 Kbytes 页数：5 Pages

Kingbright

今台电子

1.6X0.8mm SMD CHIP LED LAMP

Features ● 1.6mmx0.8mm SMT LED, 0.65mm THICKNESS. ● LOW POWER CONSUMPTION. ● WIDE VIEWING ANGLE. ● IDEAL FOR BACKLIGHT AND INDICATOR. ● VARIOUS COLORS AND LENS TYPES AVAILABLE. ● PACKAGE : 2000PCS / REEL.

文件：166.16 Kbytes 页数：5 Pages

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Ultrafast Rectifier

FEATURES · Low forward voltage drop · High frequency operation · Ultrafast recovery time APPLICATIONS · SMPS · PFC Boost Stage · Freewheeling diodes · DC-to-DC converters

文件：263.54 Kbytes 页数：2 Pages

ISC

无锡固电

1.6 x 0.8 x 0.5 mm Bi-Color Surface Mount LED

DESCRIPTIONS  The Green source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode  The Hyper Red source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode  Electrostatic discharge and power surge could damage the LEDs  It is recommended to

文件：552.43 Kbytes 页数：6 Pages

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今台电子

1.6 x 0.8 x 0.5 mm Bi-Color Surface Mount LED

DESCRIPTIONS  The Green source color devices are made with InGaN on Sapphire Light Emitting Diode  The Hyper Red source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode  Electrostatic discharge and power surge could damage the LEDs  It is recommended to use a w

文件：550.93 Kbytes 页数：6 Pages

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今台电子

1.6 x 0.8 x 0.5 mm Bi-Color Surface Mount LED

DESCRIPTIONS  The Super Bright Yellow device is made with AlGaInP (on GaAs substrate) light emitting diode chip  The Hyper Red source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode  Electrostatic discharge and power surge could damage the LEDs  It is recommen

文件：558.53 Kbytes 页数：6 Pages

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1.6 x 0.8 mm Infrared Emitting Diode

DESCRIPTION  F3 Made with Gallium Arsenide Infrared Emitting diodes FEATURES  1.6 mm x 0.8 mm SMD LED, 0.65 mm thickness  Mechanically and spectrally matched to the phototransistor  Package: 4000 pcs / reel  Moisture sensitivity level: 3  Halogen-free  RoHS compliant APPLICATIO

文件：462.22 Kbytes 页数：4 Pages

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1.6 x 0.8 mm Infrared Emitting Diode

DESCRIPTION  SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes FEATURES  1.6 mm x 0.8 mm SMD LED, 0.65 mm thickness  Mechanically and spectrally matched to the phototransistor  Package: 4000 pcs / reel  Moisture sensitivity level: 3  Halogen-free  RoHS compliant

文件：462.8 Kbytes 页数：4 Pages

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今台电子