100V N-Channel Enhancement Mode MOSFET

Features - VDS = 100V ID =150A - RDS(ON)

文件：1.12752 Mbytes 页数：8 Pages

APME

永源微电子

100V N-Channel Enhancement Mode MOSFET

Features - VDS = 100V ID =160A - RDS(ON)

文件：1.55934 Mbytes 页数：8 Pages

APME

永源微电子

100V N-Channel Enhancement Mode MOSFET

Features - VDS = 100V ID =160A - RDS(ON)

文件：1.55934 Mbytes 页数：8 Pages

APME

永源微电子

100V N-Channel Enhancement Mode MOSFET

Features - VDS = 100V ID =160A - RDS(ON)

文件：1.55934 Mbytes 页数：8 Pages

APME

永源微电子

40V N-Channel Enhancement Mode MOSFET

Features - VDS = 40V ID =180A - RDS(ON)

文件：1.037339 Mbytes 页数：7 Pages

APME

永源微电子

40V N-SGT Enhancement Mode MOSFET

Features - Low RDS(on) & FOM - Extremely low switching loss - Excellent stability and uniformity - Fast switching and soft recovery - Invertors Applications - Consumer electronic power supply - Motor control - Synchronous-rectification - Isolated DC

文件：1.3499 Mbytes 页数：7 Pages

APME

永源微电子

丝印：APG20N06S；Package：SOP-8L；60V N-Channel Enhancement Mode MOSFET

Features - VDS = 60V ID =20A - RDS(ON)

文件：2.01435 Mbytes 页数：7 Pages

APME

永源微电子

丝印：APG20N10D；Package：TO-252-3；100V N-Channel Enhancement Mode MOSFET

Features - Low RDS(on) & FOM - Extremely low switching loss - Excellent stability and uniformity or Invertors Applications - Consumer electronic power supply - Motor control - Synchronous-rectification - Isolated DC

文件：1.89156 Mbytes 页数：7 Pages

APME

永源微电子

丝印：APG40N10D；Package：TO-252-3L；100V N-Channel Enhancement Mode MOSFET

Features - VDS = 100V ID =40A - RDS(ON)

文件：729.52 Kbytes 页数：7 Pages

APME

永源微电子

100V N-Channel Enhancement Mode MOSFET

Features - VDS = 100V ID =40A - RDS(ON)

文件：769.76 Kbytes 页数：7 Pages

APME

永源微电子