24-ch Digital Input Module

文件：277.24 Kbytes 页数：1 Pages

ADVANTECH

研华科技

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：310.15 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

文件：345.06 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

文件：345.08 Kbytes 页数：2 Pages

ISC

无锡固电