Capable of 2.5V Gate Drive, SO-8 Compatible

文件：69.55 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

文件：64.08 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

文件：50.94 Kbytes 页数：5 Pages

A-POWER

富鼎先进电子

N-Channel Enhancement Mode MOSFET

Features • 30V/8A , RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=23mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered System

文件：149.3 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 30V/8A , RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=23mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered System

文件：149.3 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 30V/8A , RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=23mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered System

文件：149.3 Kbytes 页数：9 Pages

ANPEC

茂达电子